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MBR730 - MBR760
7.5A SCHOTTKY BARRIER RECTIFIER Features
* * * * * * *
Schottky Barrier Chip Guard Ring Die Construction for Transient Protection Low Power Loss, High Efficiency High Surge Capability High Current Capability and Low Forward Voltage Drop For Use in Low Voltage, High Frequency Inverters, Free Wheeling, and Polarity Protection Application Lead Free Finish, RoHS Compliant (Note 4)
K C D A L B M
TO-220AC Dim A B C D E G
E G J R P
Pin 1 + Pin 2 + Case
Min 14.48 10.00 2.54 5.90 2.80 12.70 0.69 3.54 4.07 1.15 0.30 2.04 4.83
Max 15.75 10.40 3.43 6.40 3.93 14.27 0.93 3.78 4.82 1.39 0.50 2.79 5.33
Mechanical Data
* * * * * * *
Case: TO-220AC Case Material: Molded Plastic. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020C Terminals: Finish - Bright Tin. Solderable per MIL-STD-202, Method 208 Polarity: See Diagram Marking: Type Number Weight: 2.3 grams (approx.)
Pin 1
Pin 2
J K L M N P R
N
All Dimensions in mm
Maximum Ratings and Electrical Characteristics
Single phase, half wave, 60Hz, resistive or inductive load. For capacitive load, derate current by 20%. Characteristic Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage RMS Reverse Voltage Average Rectified Output Current (Note 1) @ TC = 125C Non-Repetitive Peak Forward Surge Current 8.3ms single half sine-wave superimposed on rated load (JEDEC Method) Forward Voltage Drop (Note 3) @ IF = 7.5A, TJ = 25C @ IF = 7.5A, TJ = 125C @ IF = 15A, TJ = 25C @ IF = 15A, TJ = 125C @ TJ = 25C @ TJ = 125C Symbol VRRM VRWM VR VR(RMS) IO IFSM MBR 730 30 21
@ TA = 25C unless otherwise specified
MBR 735 35 24.5
MBR 740 40 28 7.5 150 3/4 0.57 0.84 0.72 0.1 15 400 3.5
MBR 745 45 31.5
MBR 750 50 35
MBR 760 60 42
Unit V V A A
VFM
0.75 0.65 3/4 3/4 0.5 50
V
Peak Reverse Current at Rated DC Blocking Voltage Typical Total Capacitance (Note 2)
IRM CT RqJc dV/dt Tj TSTG
mA pF C/W V/ms C C
Typical Thermal Resistance Junction to Case (Note 1) Voltage Rate of Change (Rated VR) Operating Temperature Range Storage Temperature Range
Notes:
10,000 -55 to +150 -55 to +175
1. Thermal resistance junction to case mounted on heatsink. 2. Measured at 1.0 MHz and applied reverse voltage of 4.0V DC. 3. Short duration test pulse used to minimize self-heating effect. 4. RoHS revision 13.2.2003. Glass and High Temperature Solder Exemptions Applied, see EU Directive Annex Notes 5 and 7.
DS23007 Rev. 9 - 2
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MBR730-MBR760
a Diodes Incorporated
10
100
8
IF, INSTANTANEOUS FWD CURRENT (A)
I(AV), AVERAGE FWD CURRENT (A)
MBR730 - MBR745
10
6
MBR750 - MBR760
4
1.0
2
0 0 50 100 150 TC, CASE TEMPERATURE ( C) Fig. 1 Fwd Current Derating Curve
0.1 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 VF, INSTANTANEOUS FWD VOLTAGE (V) Fig. 2 Typ Instantaneous Fwd Characteristics
175
4000
8.3 ms Single half sine-wave (JEDEC method)
IFSM, PEAK FWD SURGE CURRENT (A)
f = 1.0MHz
150
125
CT, CAPACITANCE (pF)
1000
100
75
50
25 1 10 NUMBER OF CYCLES AT 60Hz Fig. 3 Max Non-Repetitive Surge Current 100
100 0.1 1.0 10 100 VR, REVERSE VOLTAGE (V) Fig. 4 Typical Total Capacitance
IR, INSTANTANEOUS REVERSE CURRENT (mA)
10
Tj = 125 C
1.0
0.1
Tj = 75 C
0.01
Tj = 25 C Resistive or Inductive load
0.001 0 20 40 60
80
100
PERCENT OF RATED PEAK REVERSE VOLTAGE (%) Fig. 5 Typical Reverse Characteristics
DS23007 Rev. 9 - 2
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MBR730-MBR760
Ordering Information
Device MBR7xx*
(Note 5) Packaging TO-220AC Shipping 50/Tube
* xx = Device type, e.g. MBR745 Notes: 5. For Packaging Details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf.
DS23007 Rev. 9 - 2
3 of 3 www.diodes.com
MBR730-MBR760

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